TiAlN film preparation by Y-shape filtered-arc-deposition system

Thin Solid Films

Volumn 516, Issue 19, 2008, Pages 6650-6654

  Mashiki, Takayuki ^a   Hikosaka, Hiroki ^a   Tanoue, Hideto ^a   Takikawa, Hirofumi ^a   Hasegawa, Yushi ^b   Taki, Makoto ^b   Kumagai, Masao ^c   Kamiya, Masao ^a,d  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Onward Ceramic Coating Co Ltd   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^d Itoh Optical Industrial Co Ltd   (Japan)

Author keywords

Composition distribution; Film properties; TiAlN; Y FAD

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; CAVITY RESONATORS; COMPUTER NETWORKS; CUBIC BORON NITRIDE; ELECTRON TUBES; HARDNESS; LIGHT METALS; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PLASMA (HUMAN); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; STRESSES; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; THICK FILMS; THIN FILMS; TITANIUM; TITANIUM NITRIDE; VAPOR DEPOSITION;

(1 1 0) SURFACE; (ABIOTIC AND BIOTIC) STRESS; AL CONTENT; ARC CURRENTS; ARC PLASMAS; ARITHMETICAL MEAN ROUGHNESS; COMPRESSION STRESSES; CONTENT RATIO; DEPOSITION SYSTEMS; ELSEVIER (CO); FILM PROPERTIES; MAXIMUM HARDNESS; NITROGEN GASES; TITANIUM ALUMINUM NITRIDE; UNIFOR M DISTRIBUTION;

FILM PREPARATION;

EID: 45549093739     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.11.097     Document Type: Article

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