Multi-patterning overlay control

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6924, Issue , 2008, Pages

  Ausschnitt, C P ^a   Dasari, P ^b  

^a IBM MICROELECTRONICS   (United States)

^b NANOMETRICS INC   (United States)

Author keywords

Blossom metrology; Lithography; Overlay control

Indexed keywords

MEASUREMENTS; PERCOLATION (SOLID STATE); PHOTOLITHOGRAPHY;

CRITICAL LEVELS; DEGREES OF FREEDOM; FIELD OF VIEW (FOV); INTEGRATION STRATEGIES; OPTICAL LITHOGRAPHY; OPTICAL MICRO LITHOGRAPHY; OVERLAY CONTROL; OVERLAY METROLOGY; USE CASES;

DYNAMIC POSITIONING;

EID: 45449114981     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772865     Document Type: Conference Paper

References (5)

1. C. P. Ausschnitt, et. al. "Multi-layer overlay metrology," Proc. SPIE 6152, 615210 (2006).
2. C. P. Ausschnitt, et. al. "Blossom overlay metrology implementation," Proc. SPIE 6518, 65180G (2007).
3. Y S. Ku. et. al. "In-chip overlay metrology for45nm and 55nm processes," Proc. SPIE 6518. 65182V (2007)
4. B. Schultz, et. al. "Meeting overlay requirements for future technology nodes with in-die overlay metrology", Proc. SPIE 6518, p. 65180E (2007)
5. M. Adel, et. al. "The challenges of transitioning from linear to high-order overlay control in advanced lithography," Proc. SPIE 6827, 682722 (2007).