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Semiconductor Science and Technology

Volumn 17, Issue 6, 2002, Pages 515-521

Electrical stressing effects in solid-phase crystallized polysilicon thin film transistors

(3) Kouvatsos, D N a Vamvakas, V E a Davazoglou, D a

a INSTITUTE OF MICROELECTRONICS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL STRESSING EFFECTS; MIDGAP TRAP STATE DENSITY; STRESSING CURRENT;

CRYSTALLIZATION; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; HOLE TRAPS; POLYSILICON; STRESSES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

THIN FILM TRANSISTORS;

EID: 0036610423 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/6/303 Document Type: Article

Times cited : (7)

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