Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors

Microelectronics Reliability

Volumn 43, Issue 1, 2003, Pages 57-60

  Hastas, N A ^a   Dimitriadis, C A ^a   Brini, J ^b   Kamarinos, G ^b   Gueorguiev, V K ^c   Kaschieva, S ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b Grenoble INP Phelma   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GAMMA RAYS; IRRADIATION; LEAKAGE CURRENTS; POLYSILICON; THRESHOLD VOLTAGE;

INTRINSIC RESISTANCE;

THIN FILM TRANSISTORS;

EID: 0037226136     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00119-1     Document Type: Article

References (13)

1. Wang H., Chan M., Jagar S., Wang Y., Ko P.K. Submicron super TFTs for 3-D VLSI applications. IEEE Electron Dev. Lett. 21:2000;439.
2. Majkusiak B., Jakubowski A., Grigorov K., Balasinski A. Influence of high-dose. γ irradiation on electron mobility in a silicon inversion layer Appl. Phys. Lett. 57:1990;1643.
3. Dunn G.J., Gross B.J., Sodini C.G. Radiation-induced increase in the inversion layer mobility of reoxidized nitrided oxide MOSFETs. IEEE Trans. Electron Dev. 39:1992;677.
4. 2O-nitrided gate oxides. IEEE Trans. Electron Dev. 40:1993;1565.
5. Matsushita T., Fukunaga C., Ikeda H., Saitoh Y. Radiation susceptibility of a non-radiation-hard 1.2. μ m CMOS transistors Nucl. Instrum. Meth. A. 350:1994;199.
6. Matsushita T., Fukunaga C., Ikeda H., Saitoh Y. Total-dose effects of. γ -ray irradiation on SOI-MOS transistors Nucl. Instrum. Meth. A. 366:1995;366.
7. Ohshima T., Itoh H., Yoshikawa M. Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide. J. Appl. Phys. 90:2001;3038.
8. Dimitriadis C.A., Brini J., Kamarinos G., Gueorguiev V.K., Ivanov T.z.I. Conduction and low-frequency noise in high temperature processed polycrystalline silicon thin film transistors. J. Appl. Phys. 83:1998;1469.
9. Young N.D., Gill A. Water-related instability in TFTs formed using deposited gate oxides. Semicond. Sci. Technol. 7:1992;1103.
10. Terrell J.M., Oldham T.R., Lelis A.J., Benedetto J.M. Time-dependent annealing of radiation-induced leakage currents in MOS devices. IEEE Trans. Nucl. Sci. 36:1989;2205.
11. Shaneyfelt M.R., Dodd P.E., Draper B.L., Flores R.S. Challenges in hardening technologies using shallow-trench isolation. IEEE Trans. Nucl. Sci. 45:1998;2584.
12. Fleetwood D.M., Tsao S.S., Winokur P.S. Total-dose hardness assurance issues for SOI MOSFETs. IEEE Trans. Nucl. Sci. 35:1988;1361.
13. Dimitriadis C.A., Coxon P.A., Economou N.A. Leakage current of undoped LPCVD polycrystalline silicon thin-film transistors. IEEE Trans. Electron Dev. 42:1995;950.