Realistic application of CNTs

Materials Today

Volumn 7, Issue 9, 2004, Pages 46-52

  Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CATALYSIS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELASTIC MODULI; ELECTRON MICROSCOPES; FIELD EFFECT TRANSISTORS; GRAPHITE; PROCESS CONTROL; RAMAN SPECTROSCOPY; SHIELDING; CATALYSTS; COMPOSITE MATERIALS; CURRENT DENSITY; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; LIGHT ABSORPTION; MIXTURES; THERMAL CONDUCTIVITY;

BALLISTIC ELECTRON TRANSPORT; INDIUM TIN OXIDE (ITO); NANOSTRUCTURED CARBON; NANOTUBE GROWTH;

CARBON NANOTUBES;

BALLISTIC ELECTRON TRANSPORT; CONDUCTING COMPOSITES; NONLINEAR ABSORPTION COEFFICIENTS; SINGLE-WALLED CARBON NANOTUBES (SWNT);

EID: 4544324451     PISSN: 13697021     EISSN: None     Source Type: Journal    
DOI: 10.1016/s1369-7021(04)00448-1     Document Type: Review

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