SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 880-884

Analysis of lateral resolution and contrast of scanning capacitance microscopes

(2) Lányi, Štefan a Hruškovic, Miloslav b

a INSTITUTE OF PHYSICS (Slovakia)

b SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

Author keywords

Computer simulations; Metal insulator interfaces; Metal oxide semiconductor (MOS) structures

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DATA REDUCTION; DIELECTRIC FILMS; ELECTRIC DISTORTION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ERROR ANALYSIS; FABRICATION; FINITE ELEMENT METHOD; PERTURBATION TECHNIQUES; PROBLEM SOLVING; SENSITIVITY ANALYSIS;

METAL-INSULATOR INTERFACES; METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURES; SURFACE CHARGE DENSITY; VOLTAGE MODULATION;

SURFACE CHEMISTRY;

EID: 4544307860 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2004.06.025 Document Type: Article

Times cited : (5)

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