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Semiconductor Science and Technology

Volumn 19, Issue 9, 2004, Pages

Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K

(5) Gaspari, V a Fobelets, K a Velazquez Perez, J E b Prest, M J c Whall, T E c

a IMPERIAL COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF SALAMANCA (Spain)

c UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; CRYSTAL DEFECTS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SILICON; THERMAL EFFECTS; TRANSCONDUCTANCE;

DRY THERMAL OXIDATION; DYNAMIC-THRESHOLD (DT) PERFORMANCES; SILICON BUFFER LAYERS; SILICON CONTROL DEVICES;

MOSFET DEVICES;

EID: 4544253904 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/19/9/L01 Document Type: Article

Times cited : (2)

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