A novel high performance SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 206-208

  Takagi, T ^a   Inoue, A ^a   Hara, Y ^a   Kanzawa, Y ^a   Kubo, M ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

; Body effect factor; DTMOS; Parasitic channel; Short channel effect; SiGe

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DYNAMIC THRESHOLD METAL OXIDE SEMICONDUCTOR (DTMOS); PARASITIC CHANNELS;

MOSFET DEVICES;

EID: 0035339402     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919230     Document Type: Article

References (5)