Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 334-336

  Gaspari, Valerio ^a   Fobelets, K ^a   Ding, P W ^a   Velazquez Perez, J W ^b   Olsen, S H ^c   O'Neill, A G ^c   Zhang, J ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SALAMANCA   (Spain)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Body effect factor; Dynamic threshold; Low temperature; SiGe; Strained Si (s Si)

Indexed keywords

CALCULATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; TRANSCONDUCTANCE;

BODY-EFFECT FACTOR; DYNAMIC THRESHOLD; STRAINED SILICON SURFACE CHANNEL; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 2442583495     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.827286     Document Type: Letter

References (8)

1. J. Welser, J. L. Hoyt, and J. F. Gibbons, "Electron-mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors," IEEE Electron Device Lett., vol. 15, pp. 100-102, Mar. 1994.
2. F. Assaderaghi, S. Parke, D. Sinitshy, J. Bokor, P. K. Ko, and C. Hu, "A dynamic threshold voltage MOSFET (DTMOS) for very low power voltage operation," IEEE Electron Device Lett., vol. 15, pp. 510-512, Dec. 1994.
3. T. Takagi, A. Inoue, Y. Hara, Y. Kanzana, and M. Kubo, "A novel high performance SiGe channel heterostructure dynamic threshold pMOSFET (HDTMOS)," IEEE Electron Device Lett., vol. 22, pp. 206-208, May 2001.
4. T. Kawashima et al., "Proposal of n-channel heterostructure dynamic threshold voltage (HDTMOS) with p-type doped SiGe body," in Device Research Conf. Tech. Dig., 2002, pp. 51-52.
5. V. Gaspari et al., "Effect of temperature on the transfer characteristic of a 0.5 μm gate Si:SiGe depletion-mode n-MODFET," Appl. Surf. Sci., vol. 224, pp. 390-393, 2004.
6. S. H. Olsen et al., "High-performance nMOSFETs using a novel strained-Si-SiGe CMOS architecture," IEEE Trans. Electron Devices, vol. 50, pp. 1961-1969, Sept. 2003.
7. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. New York: McGraw-Hill, 1999.
8. D. K. Schroeder, Semiconductor Material and Device Characterization. New York: Wiley, 1990.