Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 390-393

  Gaspari, V ^a   Fobelets, K ^a   Velazquez Perez, J E ^b   Ferguson, R ^a   Michelakis, K ^a   Despotopoulos, S ^a   Papavassilliou, C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

Field effect devices; Heterostructures electrical properties; Integrated circuit fabrication technology; Metal insulator semiconductor structures (including semiconductor to insulator); Microelectronics: LSI, VLSI, ULSI; Semiconductor compounds

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CRYOGENICS; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; MICROELECTRONICS; MISFET DEVICES; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; THERMAL EFFECTS; TRANSCONDUCTANCE; ULSI CIRCUITS;

INTEGRATED CIRCUIT FABRICATION TECHNOLOGY; LOW-TEMPERATURE TECHNIQUES;

GATES (TRANSISTOR);

EID: 1142292377     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.066     Document Type: Conference Paper

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7. V. Gaspari, K. Fobelets, R. Ferguson, K. Michelakis, S. Despotopoulos, C. Papavassilliou, J.E. Velázquez-Pérez, Thermal study of 0.5 μm-gate Si/SiGe depletion-mode n-MOSFET, in: Proceedings of the Electron Devices Conference, CDE-2003, IEEE Conferences Series, Barcelona, 12-14 February 2003.