Ga2O3 and GaN semiconductor hollow spheres

Angewandte Chemie - International Edition

Volumn 43, Issue 29, 2004, Pages 3827-3831

  Sun, Xiaoming ^a   Li, Yadong ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Gallium; Microspheres; Nanostructures; Semiconductors; Template synthesis

Indexed keywords

CARBON; INFRARED RADIATION; SEMICONDUCTOR MATERIALS; THICKNESS CONTROL; ULTRAVIOLET RADIATION;

BAND GAPS; CARBON SPHERES; SEMICONDUCTOR HOLLOW SPHERES;

GALLIUM NITRIDE;

CARBON; GALLIUM; NITROGEN DERIVATIVE; OXYGEN DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; INFRARED RADIATION; NANOPARTICLE; PARTICLE SIZE; SEMICONDUCTOR; THERMOGRAVIMETRY; THICKNESS; ULTRAVIOLET RADIATION; X RAY ANALYSIS;

EID: 4544239373     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200353212     Document Type: Article

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