Investigation of apertureless NSOM for measurement of stress in strained silicon

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 235-244

  McDonough, Colin ^a   Atesang, Jacob ^a   Wang, Yunfei ^a   Geer, Robert E ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SILICA; SILICON OXIDES; SILVER COMPOUNDS; STRAINED SILICON; STRESS RELAXATION;

APERTURELESS NSOM; DIFFERENTIAL SCHEME; ENGINEERED STRAINS; INTEGRATED CIRCUIT DEVICES; NEAR-FIELD SCANNING; PATTERNED SILICON; STRAIN CHARACTERIZATION; TIP-ENHANCED RAMAN SCATTERINGS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45249102676     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728866     Document Type: Conference Paper

References (11)

1. L. Novotny, E J Sanchez, and X. S. Xie, Phys. Rev. Lett., 82, 4014 (1999).
2. A. Hartschuh, E Z. Sanchez, X. S. Xie, and L. Novotny, Phys. Rev. Lett., 90, 9 (2003).
3. H. Watanabe, Y. Ishida, N. Hayazawa, Y. Inouye, and S, Kawata, Phys. Rev. B, 69, 155418 (2004).
4. W. X Sun, Z X. Shen, Ultramicroscopy, 94, 237 (2003).
5. Jacob Atesang, Robert Geer Proceedings of SPIE, Robert E. Geer, Norbert Meyendorf, George Y. Baaklini, Bernd Michel, Editors, Vol. 5766, p. 134, SPIE Press, Belhngham, WA (2005).
6. K. Rim, Solid State Electronics, 43, 1133 (2003).
7. R. Matyi, unpublished.
8. I. De Wolf, Semicond. Sci. Technol 11, 139 (1996).
9. I. De Wolf, H. E. Maes, and S. K. Jones, J. Appl. Phys. 79, 7148 (1996).
10. E. Anastassakis, A. Cantarero, and M Cardona, Phys. Rev. B 41, 7529 (1990).
11. A. Sokolov, unpublished.