Near-field nano-Raman scattering from Si device structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5766, Issue , 2005, Pages 134-140

  Atesang, Jacob ^a   Geer, Robert ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Near field scanning optical microscopy; Raman scattering

Indexed keywords

NEAR FIELD SCANNING OPTICAL SPECTROMETRY; NSOM GEOMETRY; STRESS MEASUREMENTS;

IMAGING TECHNIQUES; MEASUREMENTS; OPTICAL BEAM SPLITTERS; OPTICAL MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SPECTROMETERS;

RAMAN SCATTERING;

EID: 25644441580     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600343     Document Type: Conference Paper

References (10)

1. C. Stuera, J. Van Landuyt, H. Bender, R. Rooyackers, and G. Badenes, Materials Science in Semiconductor Processing 4 117, (2001).
2. Ehrenfried Zschech and Hans-Jürgen Engelmann, unpublished results.
3. De Wolf, H. E. Maes, and S. K. Jones, J. Appl. Phys. 79, 7148, (1996).
4. De Wolf, Semicond. Sci. Technol. 11, 139, (1996).
5. M.S. Anderson and W. T. Pike, Rev. Sci. Instrum., 73, 1198 (2002).
6. W.X. Sun and Z.X. Shen, Ultramicroscopy 94, 237 (2003).
7. Hartschuh, N. Anderson, and L. Novotny, Journal of Microscopy 210, 234 (2003).
8. H. F. Hamann, M. Larbadi, S. Barzen, T. Brown, A. Gallagher, and D.J. Nesbitt, Optics Communications 227, 1 (2003).
9. T. Ichimura, N. Hayazawaa, M. Hashimoto, Y. Inouyea, and S. Kawata, Appl. Phys. Lett. 84, 1768 (2004).
10. L. Novotny, unpublished results.