Application of rapid thermal annealing on 1.3-1.55 μm GaInNAs(Sb) lasers grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 979-983

  Zhao, H ^a   Xu, Y Q ^a   Ni, H Q ^a   Zhang, S Y ^a   Han, Q ^a   Du, Y ^a   Yang, X H ^a   Wu, R H ^a   Niu, Z C ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Photoluminescence; A3. Quantum well; A3. Rapid thermal annealing

Indexed keywords

DETERIORATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

CAVITY LENGTH; LASER GROWTH; THRESHOLD CURRENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33947304301     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.307     Document Type: Article

References (9)

1. Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., and Yazawa Y. Jpn. J. Appl. Phys. 35 (1996) 1273
2. Miyamoto T., Takada T., Takeuchi K., Koyama F., and Iga K. Quantum Opt. 9 (1997) 126
3. Spruytte S.G., Coldren C.W., Harris J.S., Wampler W., Krispin P., Ploog K., and Larson M.C. J. Appl. Phys. 89 (2001) 4401
4. Li W., Pessa M., Ahlgren T., and Dekker J. Appl. Phys. Lett. 79 (2001) 1094
5. Thinh N.Q., Buyanova I.A., Chen W.M., Xin H.P., and Tu C.W. Appl. Phys. Lett 79 (2001) 3089
6. Gambin V., Ha W., Wistey M.A., Yuen H.B., Bank S.R., Kim S.M., and Harris J.S. IEEE J. Sel. Top. Quantum Electron. 8 (2002) 795
7. Yang X., Heroux J.B., Mei L.F., and Wang W.I. Appl. Phys. Lett. 78 (2001) 4068
8. Pan Z., Li L.H., Zhang W., Lin Y.W., Wu R.H., and Ge W. Appl. Phys. Lett. 77 (2000) 1280
9. Niu Z.C., Ni H.Q., Xu X.H., Zhang W., Xu Y.Q., and Wu R.H. Phys. Rev. B 68 (2003) 235326