Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (1 0 0) InP substrates

Solar Energy Materials and Solar Cells

Volumn 92, Issue 9, 2008, Pages 1003-1010

  Dashiell, M W ^a   Ehsani, H ^a   Sander, P C ^a   Newman, F D ^b   Wang, C A ^c   Shellenbarger, Z A ^d   Donetski, D ^e   Gu, N ^e   Anikeev, S ^e  

^a LOCKHEED MARTIN   (United States)

^b EMCORE Corporation   (United States)

^c MIT LINCOLN LABORATORY   (United States)

^d SARNOFF CORPORATION   (United States)

^e USA   (United States)

Author keywords

InGaAs; Reciprocal space mapping; Thermophotovoltaic; X ray diffraction

Indexed keywords

BUFFER LAYERS; CRYSTAL LATTICES; GALLIUM COMPOUNDS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

LATTICE POINTS; METAL-ORGANIC VAPOR PHASE EPITAXY; RECIPROCAL SPACE MAPPING; THERMOPHOTOVOLTAIC DIODES;

DIODES;

EID: 45049087993     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.02.042     Document Type: Article

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