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Volumn 18, Issue 5, 2003, Pages

MOCVD growth of lattice-matched and mismatched InGaAs materials for thermophotovoltaic energy conversion

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY CONVERSION; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOVOLTAIC CELLS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; THERMOELECTRICITY;

EID: 0037854720     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/5/309     Document Type: Article
Times cited : (51)

References (18)
  • 1
    • 0035851517 scopus 로고    scopus 로고
    • Auger recombination in low-band-gap n-type InGaAs
    • Metzger W K et al 2001 Auger recombination in low-band-gap n-type InGaAs Appl. Phys. Lett. 20 3272-4
    • (2001) Appl. Phys. Lett. , vol.20 , pp. 3272-3274
    • Metzger, W.K.1
  • 2
    • 0038389939 scopus 로고    scopus 로고
    • Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices
    • ed T J Coutts, C S Allman and J P Benner (New York: AIP)
    • Wang C A et al 1997 Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices 3rd NREL Conf. Thermophotovoltaic Generation of Electricity ed T J Coutts, C S Allman and J P Benner (New York: AIP) pp 75-87
    • (1997) 3rd NREL Conf. Thermophotovoltaic Generation of Electricity , pp. 75-87
    • Wang, C.A.1
  • 3
    • 0038051609 scopus 로고
    • OMVPE growth and characterization of InGaAs for TPV cells
    • ed T J Coutts and J P Benner (New York: AIP)
    • Ehsani H et al 1994 OMVPE growth and characterization of InGaAs for TPV cells 1st NREL Conf. Thermophotovoltaic Generation of Electricity ed T J Coutts and J P Benner (New York: AIP) pp 188-93
    • (1994) 1st NREL Conf. Thermophotovoltaic Generation of Electricity , pp. 188-193
    • Ehsani, H.1
  • 4
    • 0006184624 scopus 로고
    • 1-xAs thermophotovoltaic cell performance versus bandgap
    • ed T J Coutts and J P Benner (New York: AIP)
    • 1-xAs thermophotovoltaic cell performance versus bandgap 1st NREL Conf. Thermophotovoltaic Generation of Electricity ed T J Coutts and J P Benner (New York: AIP) pp 177-87
    • (1994) 1st NREL Conf. Thermophotovoltaic Generation of Electricity , pp. 177-187
    • Wojtczuk, S.1
  • 5
    • 0000140406 scopus 로고    scopus 로고
    • X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers
    • Olsen J A et al 1996 X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers J. Appl. Phys. 7 3578-84
    • (1996) J. Appl. Phys. , vol.7 , pp. 3578-3584
    • Olsen, J.A.1
  • 6
    • 0038728111 scopus 로고
    • 1-xAs TPV experiment-based performance models
    • ed J P Benner, T J Coutts and D S Ginley (New York: AIP)
    • 1-xAs TPV experiment-based performance models 2nd NREL Conf. Thermophotovoltaic Generation of Electricity ed J P Benner, T J Coutts and D S Ginley (New York: AIP) pp 387-93
    • (1995) 2nd NREL Conf. Thermophotovoltaic Generation of Electricity , pp. 387-393
    • Wojtczuk, S.1
  • 8
    • 0030384864 scopus 로고    scopus 로고
    • Monolithically interconnected InGaAs TPV module development
    • (Washington, DC)
    • Wilt D M et al 1996 Monolithically interconnected InGaAs TPV module development 25th IEEE Photovoltaic Specialists Conf. 1996 (Washington, DC) pp 43-8
    • (1996) 25th IEEE Photovoltaic Specialists Conf. 1996 , pp. 43-48
    • Wilt, D.M.1
  • 10
    • 0038051610 scopus 로고    scopus 로고
    • Electrical and optical performance characteristics of 0.74 eV p/n InGaAs monolithic interconnected modules
    • ed T J Coutts, C S Allman and J P Benner (New York: AIP)
    • Wilt D M et al 1997 Electrical and optical performance characteristics of 0.74 eV p/n InGaAs monolithic interconnected modules 3rd NREL Conf. Thermophotovoltaic Generation of Electricity ed T J Coutts, C S Allman and J P Benner (New York: AIP) pp 237-47
    • (1997) 3rd NREL Conf. Thermophotovoltaic Generation of Electricity , pp. 237-247
    • Wilt, D.M.1
  • 13
    • 0001390447 scopus 로고
    • Application of critical composition difference concept to the growth of low dislocation density InGaAs on GaAs
    • Krishnamoorthy V et al 1992 Application of critical composition difference concept to the growth of low dislocation density InGaAs on GaAs J. Appl. Phys. 72 1752
    • (1992) J. Appl. Phys. , vol.72 , pp. 1752
    • Krishnamoorthy, V.1
  • 15
    • 0012618278 scopus 로고    scopus 로고
    • 0.68 thermophotovoltaic converter and monolithically interconnected modules
    • ed T J Coutts, C S Allman and J P Benner (New York: AIP)
    • 0.68 thermophotovoltaic converter and monolithically interconnected modules 4th NREL Conf. Thermophotovoltaic Generation of Electricity ed T J Coutts, C S Allman and J P Benner (New York: AIP) pp 132-41
    • (1997) 4th NREL Conf. Thermophotovoltaic Generation of Electricity , pp. 132-141
    • Wanlass, M.W.1
  • 16
    • 0012521912 scopus 로고    scopus 로고
    • Low-bandgap, double-heterostructure InAsP/GaInAs photovoltaic converters
    • US Patent no 6,300,557 B1
    • Wanlass M W 2001 Low-bandgap, double-heterostructure InAsP/GaInAs photovoltaic converters US Patent no 6,300,557 B1
    • (2001)
    • Wanlass, M.W.1
  • 17
    • 4243254288 scopus 로고    scopus 로고
    • Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance
    • US Patent no 6,162,987
    • Murray C S and Wilt D M 2000 Monolithic interconnected module with a tunnel junction for enhanced electrical and optical performance US Patent no 6,162,987
    • (2000)
    • Murray, C.S.1    Wilt, D.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.