High frequency characteristics of tin oxide thin films on Si

Vacuum

Volumn 82, Issue 11, 2008, Pages 1183-1186

  Yüksel, Ö Faruk ^a   Ocak, S B ^b   Selcuk A B ^b  

^a SELCUK UNIVERSITY   (Turkey)

^b NONE

Author keywords

Interface state density; MOS diodes; Series resistance; SnO2

Indexed keywords

INTERFACES (MATERIALS); SCHOTTKY BARRIER DIODES; SILICON; TIN OXIDES;

INTERFACE STATE DENSITY; MOS DIODES; SERIES RESISTANCE;

THIN FILMS;

EID: 45049087274     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.02.002     Document Type: Article

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