Terahertz generation and chaotic dynamics in GaN NDR diode

Semiconductor Science and Technology

Volumn 19, Issue 3, 2004, Pages 451-456

  Lu J T ^a   Cao, J C ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DOMAIN DYNAMICS; SELF OSCILLATION FREQUENCY; TERAHERTZ GENERATION;

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FREQUENCIES; GUNN DIODES; OSCILLATIONS;

GALLIUM NITRIDE;

EID: 1642381207     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/3/028     Document Type: Article

References (12)

1. Krishnamurthy S, van Schilfgaarde M, Sher A and Chen A B 1997 Appl. Phys. Lett. 71 1999
2. Bulutay C, Ridley B K and Zakhleniuk N A 1997 Appl. Phys. Lett. 77 2707
3. Kolnik J, Qguzmann I H, Brennan K F, Rongping W, Ruden P P and Yang W 1995 J. Appl. Phys. 78 1033
4. Bhapkar U D and Shur M 1997 J. Appl. Phys. 82 1649
5. Joshi R P and Viswanadha S 2003 J. Appl. Phys. 93 4836
6. Alekseev E and Pavlidis D 2000 Solid State Electron. 44 941
7. Eisele H and Haddad G I 1998 Modern Semiconductors Device Physics (New York: Wiley)
8. Alekseev E, Eisenbach A and Pavlidis D 2000 MTT-S International Microwave Symposium (Boston, MA, June 2000)
9. Cao J C and Lei X L 2001 Phys. Rev. B 63 115308
10. Cao J C and Lei X L 1999 Phys. Rev. B 59 2199
11. Mosekilde E, Feldberg R, Knudsen C and Hindsholm M 1990 Phys. Rev. B 41 2298
12. Jiang Z F and Ma B K 1991 Phys. Rev. B 44 11072