Statistical compact model parameter extraction by direct fitting to variations

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1487-1493

  Takeuchi, Kiyoshi ^a,b,c   Hane, Masami ^a,b  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Leading Edge Technologies Inc   (Japan)

Author keywords

Compact modeling; Integrated circuit modeling; Modeling; MOSFET circuits; Parameter extraction; Random variables; Semiconductor device modeling; Statistical compact modeling

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MATHEMATICAL MODELS; PARAMETER EXTRACTION; RANDOM VARIABLES; STATISTICAL METHODS;

INTEGRATED CIRCUIT MODELING; MOSFET CIRCUITS; STATISTICAL MODEL;

MOSFET DEVICES;

EID: 44949187639     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.922491     Document Type: Article

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