Statistical parameter extraction for intra- and inter-chip variabilities of metal-oxide-semiconductor field-effect transistor characteristics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 1 A, 2005, Pages 131-134

  Okada, Kenichi ^a   Onodera, Hidetoshi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Inter chip variability; Intra chip variability; Modeling; Parameter extraction; Process fluctuation

Indexed keywords

COMPUTER SIMULATION; DIFFERENTIAL EQUATIONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; PARAMETER ESTIMATION; SENSITIVITY ANALYSIS; STATISTICAL METHODS;

INTER-CHIP VARIABILITY; INTRA-CHIP VARIABILITY; PARAMETER EXTRACTION; PROCESS FLUCTUATION;

MOSFET DEVICES;

EID: 15544387776     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.131     Document Type: Article

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