Integrating 'atomistic', intrinsic parameter fluctuations into compact model circuit analysis

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 437-440

  Cheng, B J ^a   Roy, S ^a   Roy, G ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT MODEL; INTRINSIC PARAMETER FLUCTUATION;

EID: 44949162766     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256907     Document Type: Conference Paper

References (8)

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3. A. Asenov and S. Saini, "Suppression of random dopant-induced threshold voltage fluctuations in sub-0. l-μm MOSFET's with epitaxial and delta -doped channels," IEEE Transactions on Electron Devices, vol. 46, pp. 1718-24, 1999.
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7. A. Asenov, M. Jaraiz, S. Roy, G. Roy, et al., "Integrated Atomistic. Process and Device Simulation of Decananometre MOSFETs", Proc. SISPAD2002, pp. 87-90, 2002
8. S. Inaba, K. Okano, S. Matsuda, M. Fujiwara, et al., "High Performance 35 nm Gate Length CMOS with NO Oxynitride Gate Dielectric and Ni SALIC1DE", Tech. Digest IEDM, 2001