메뉴 건너뛰기




Volumn 145-146, Issue 1-2, 2008, Pages 161-175

Horizontal HALL devices: A lumped-circuit model for EDA simulators

Author keywords

EDA simulator; HALL effect; Lumped model; Magnetometer; SPICE

Indexed keywords

CIRCUIT THEORY; DYNAMIC ANALYSIS; DYNAMIC MODELS; DYNAMIC RESPONSE; FIELD EFFECT TRANSISTORS; HALL EFFECT; HALL EFFECT DEVICES; HALL MOBILITY; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MODAL ANALYSIS; PHOTOACOUSTIC EFFECT; SPICE;

EID: 44849135869     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.11.030     Document Type: Article
Times cited : (23)

References (41)
  • 2
    • 0041464605 scopus 로고    scopus 로고
    • Micro-Hall devices: performance, technologies, and applications
    • Boero G., Demierre M., Besse P.-A., and Popovic R.S. Micro-Hall devices: performance, technologies, and applications. Sens. Actuators A 106 (2003) 314-320
    • (2003) Sens. Actuators A , vol.106 , pp. 314-320
    • Boero, G.1    Demierre, M.2    Besse, P.-A.3    Popovic, R.S.4
  • 9
    • 0021517435 scopus 로고
    • Numerical modelling of vertical Hall-effect devices
    • Huiser A.M.J., and Baltes H.P. Numerical modelling of vertical Hall-effect devices. IEEE Elec. Dev. Lett. EDL-5 11 (1984) 482-484
    • (1984) IEEE Elec. Dev. Lett. , vol.EDL-5 , Issue.11 , pp. 482-484
    • Huiser, A.M.J.1    Baltes, H.P.2
  • 10
    • 0022091203 scopus 로고
    • Numerical modelling of magnetic-field-sensitive semiconductor devices
    • Andor L., Baltes H.P., Nathan A., and Schmidt-Weinmar H.G. Numerical modelling of magnetic-field-sensitive semiconductor devices. IEEE Trans. Elec. Dev. ED-32 7 (1985) 1224-1230
    • (1985) IEEE Trans. Elec. Dev. , vol.ED-32 , Issue.7 , pp. 1224-1230
    • Andor, L.1    Baltes, H.P.2    Nathan, A.3    Schmidt-Weinmar, H.G.4
  • 11
    • 0021453102 scopus 로고
    • Two-dimensional numerical analysis of a silicon magnetic field sensor
    • Baltes H.P., Andor L., Nathan A., and Schmidt-Weinmar H.G. Two-dimensional numerical analysis of a silicon magnetic field sensor. IEEE Trans. Elec. Dev. ED-31 7 (1984) 996-999
    • (1984) IEEE Trans. Elec. Dev. , vol.ED-31 , Issue.7 , pp. 996-999
    • Baltes, H.P.1    Andor, L.2    Nathan, A.3    Schmidt-Weinmar, H.G.4
  • 12
    • 0022087133 scopus 로고
    • Two-dimensional numerical modelling of magnetic-field sensors in CMOS technology
    • Nathan A., Huiser A.M.J., and Baltes H.P. Two-dimensional numerical modelling of magnetic-field sensors in CMOS technology. IEEE Trans. Elec. Dev. ED-32 7 (1985) 1212-1219
    • (1985) IEEE Trans. Elec. Dev. , vol.ED-32 , Issue.7 , pp. 1212-1219
    • Nathan, A.1    Huiser, A.M.J.2    Baltes, H.P.3
  • 13
    • 0021488224 scopus 로고
    • Numerical modelling of silicon magnetic field sensors: magnetoconcentration effects in split-metal-contact devices
    • Schmidt-Weinmar H.G., Andor L., Baltes H.P., and Nathan A. Numerical modelling of silicon magnetic field sensors: magnetoconcentration effects in split-metal-contact devices. IEEE Trans. Magn. MAG-20 5 (1984) 975-977
    • (1984) IEEE Trans. Magn. , vol.MAG-20 , Issue.5 , pp. 975-977
    • Schmidt-Weinmar, H.G.1    Andor, L.2    Baltes, H.P.3    Nathan, A.4
  • 14
    • 0041974543 scopus 로고    scopus 로고
    • Accuracy of numerical analysis for Hall sensor magnetometer measurements
    • Masti M., Lehtonen J., Mikkonen R., and Rostila L. Accuracy of numerical analysis for Hall sensor magnetometer measurements. IEEE Trans. Appl. Supercond. 13.m 2 (2003) 3671-3674
    • (2003) IEEE Trans. Appl. Supercond. , vol.13 m , Issue.2 , pp. 3671-3674
    • Masti, M.1    Lehtonen, J.2    Mikkonen, R.3    Rostila, L.4
  • 15
  • 19
    • 0003920493 scopus 로고    scopus 로고
    • IOP Publishing, Bristol and Philadelphia
    • Popovic R.S. Hall Effect Devices (2004), IOP Publishing, Bristol and Philadelphia
    • (2004) Hall Effect Devices
    • Popovic, R.S.1
  • 20
  • 23
    • 44849110344 scopus 로고    scopus 로고
    • www.cadence.com.
    • www.cadence.com.
  • 24
    • 44849117272 scopus 로고    scopus 로고
    • www.austriamicrosystems.com.
    • www.austriamicrosystems.com.
  • 25
    • 0003532560 scopus 로고    scopus 로고
    • Kluwer Academic Publishers, Boston and London. 0792372468
    • Senturia S.D. Microsystem Design (2002), Kluwer Academic Publishers, Boston and London. 0792372468
    • (2002) Microsystem Design
    • Senturia, S.D.1
  • 26
    • 84937647369 scopus 로고
    • A unipolar field-effect transistor
    • Shockley W. A unipolar field-effect transistor. Proc. IRE 40 (1952) 1365-1367
    • (1952) Proc. IRE , vol.40 , pp. 1365-1367
    • Shockley, W.1
  • 27
    • 84938443557 scopus 로고
    • Gate noise in field-effect transistors at moderately high frequencies
    • van der Ziel A. Gate noise in field-effect transistors at moderately high frequencies. Proc. IEEE 51 (1963) 461-467
    • (1963) Proc. IEEE , vol.51 , pp. 461-467
    • van der Ziel, A.1
  • 28
    • 0001495342 scopus 로고
    • Characteristics of junction field effect devices with small channel length-to-width ratios
    • Hauser J.R. Characteristics of junction field effect devices with small channel length-to-width ratios. Solid-State Electron. 10 (1967) 577-587
    • (1967) Solid-State Electron. , vol.10 , pp. 577-587
    • Hauser, J.R.1
  • 29
    • 0015007392 scopus 로고
    • Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies
    • Baechtold W. Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies. IEEE Trans. Electron Devices ED-18 2 (1971) 97-104
    • (1971) IEEE Trans. Electron Devices , vol.ED-18 , Issue.2 , pp. 97-104
    • Baechtold, W.1
  • 30
    • 0015346425 scopus 로고
    • Noise behavior of GaAs field-effect transistors with short gate lengths
    • Baechtold W. Noise behavior of GaAs field-effect transistors with short gate lengths. IEEE Trans. Electron Devices ED-19 5 (1972) 674-680
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , Issue.5 , pp. 674-680
    • Baechtold, W.1
  • 31
    • 0015665715 scopus 로고
    • On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation
    • Lehovec K., and Seeley W.G. On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation. Solid-State Electron 16 (1973) 1047-1054
    • (1973) Solid-State Electron , vol.16 , pp. 1047-1054
    • Lehovec, K.1    Seeley, W.G.2
  • 32
    • 0030214202 scopus 로고    scopus 로고
    • An improved model for four-terminal junction field-effect transistors
    • Liou J.J., and Yue Y. An improved model for four-terminal junction field-effect transistors. IEEE Trans. Electron Devices 43 8 (1996) 1309-1311
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.8 , pp. 1309-1311
    • Liou, J.J.1    Yue, Y.2
  • 33
    • 0014863545 scopus 로고
    • Voltage-current characteristics of GaAs J-FET's in the hot electron range
    • Lehovec K., and Zuleeg R. Voltage-current characteristics of GaAs J-FET's in the hot electron range. Solid-State Electron 13 (1970) 1415-1426
    • (1970) Solid-State Electron , vol.13 , pp. 1415-1426
    • Lehovec, K.1    Zuleeg, R.2
  • 34
    • 0015599920 scopus 로고
    • Current saturation and small-signal characteristics of GaAs field-effect transistors
    • Hower P.L., and Bechtel N.G. Current saturation and small-signal characteristics of GaAs field-effect transistors. IEEE Trans. Electron Devices ED-20 3 (1973) 213-220
    • (1973) IEEE Trans. Electron Devices , vol.ED-20 , Issue.3 , pp. 213-220
    • Hower, P.L.1    Bechtel, N.G.2
  • 35
    • 0019022367 scopus 로고
    • Unified field-effect transistor theory including velocity saturation
    • Murphy B.T. Unified field-effect transistor theory including velocity saturation. IEEE J. Solid-State Circuits SC-15 3 (1980) 325-328
    • (1980) IEEE J. Solid-State Circuits , vol.SC-15 , Issue.3 , pp. 325-328
    • Murphy, B.T.1
  • 36
    • 0020735515 scopus 로고
    • Compact DC model of GaAs FET's for large-signal computer calculation
    • Kacprzak T., and Materka A. Compact DC model of GaAs FET's for large-signal computer calculation. IEEE J. Solid-State Circuits SC-18 2 (1983) 211-213
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , Issue.2 , pp. 211-213
    • Kacprzak, T.1    Materka, A.2
  • 39
  • 40
  • 41
    • 0014533974 scopus 로고
    • General theory for pinched operation of the junction-gate FET
    • Grebene A.B., and Ghandhi S.K. General theory for pinched operation of the junction-gate FET. Solid-State Electron 12 (1969) 573-589
    • (1969) Solid-State Electron , vol.12 , pp. 573-589
    • Grebene, A.B.1    Ghandhi, S.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.