A nonlinear simulation model of integrated Hall devices in CMOS silicon technology

Proceedings of the IEEE International Workshop on Behavioral Modeling and Simulation, BMAS

Volumn 2002-January, Issue , 2002, Pages 14-20

  Schweda, J ^a,b   Riedling, K ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Charge carriers; Circuit simulation; CMOS technology; Doping; Equations; Resistors; Semiconductor device modeling; Shape measurement; Silicon; Voltage

Indexed keywords

BEHAVIORAL RESEARCH; CHARGE CARRIERS; CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; CONTROL NONLINEARITIES; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HALL EFFECT DEVICES; RESISTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON;

CMOS TECHNOLOGY; EQUATIONS; FUNDAMENTAL THEORY; NONLINEAR SIMULATIONS; OPERATIONAL RANGE; SEMICONDUCTOR PHYSICS; SHAPE MEASUREMENTS; SILICON TECHNOLOGIES;

SEMICONDUCTOR DEVICE MODELS;

EID: 84949771738     PISSN: 21603804     EISSN: 21603812     Source Type: Conference Proceeding    
DOI: 10.1109/BMAS.2002.1291051     Document Type: Conference Paper

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