3D simulation of cross-shaped hall sensor and its equivalent circuit model

Proceedings of the International Conference on Microelectronics

Volumn 24 I, Issue , 2004, Pages 235-238

  Jovanović, Elva ^a   Pešić, Tatjana ^a   Pantić, Dragan ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA TRANSFER; HALL EFFECT; INTERPOLATION; OPTIMIZATION;

CIRCUIT MODELS; DATA INTERPOLATION; HALL SENSORS;

SENSORS;

EID: 3142661738     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. C.L. Chin, C.R. Westgate (editors), The Hall effect and its applications, Plenum Press, New York, 1979, p. 535.
2. M. Epstein, et al. "Principles and applications of Hall-effect devices," Proceedings of the National Electronics Conference, vol. 15, p. 241, 1959.
3. H.P. Baltes, R.S.Popovic, "Integrated semiconductor magnetic field sensors," Proc. IEEE, vol. 74, p. 1107, 1986.
4. H. Blanchard, F. De Montmollin, J. Hubin, R.S. Popović, "Highly sensitive Hall sensor in CMOS technology," Sensors and Actuators 82, pp. 144-148, 2000.
5. R.S. Popović, "Numerical analysis of MOS magnetic field sensors," Solid-State Electronics, vol. 28, no. 7, pp. 711-716, 1985.
6. R.S. Popović, Hall Effect Devices, Second edition, IOP Publishing Ltd, Bristol and Philadelphia 2004.
7. ISE TCAD - Users Manual, Release 7.0, Integrated System Engineering AG, Zurich, Switzerland.
8. 0.8μm HV CMOS Process Parameters, Austria Mikro Systeme International AG, Document # 9933013, 1999.