Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7286-7289

  Barozzi, M ^a   Giubertoni, D ^a   Pederzoli, S ^a   Anderle, M ^a   Iacob, E ^a   Bersani, M ^a  

^a ITC IRST   (Italy)

Author keywords

Arsenic; Energy distribution; Matrix effect; SIMS

Indexed keywords

ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON; SPUTTERING;

ENERGY DISTRIBUTION; MATRIX EFFECT; ULTRA SHALLOW JUNCTIONS;

ARSENIC;

EID: 33747167038     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.135     Document Type: Article

References (9)

1. Wilson R.G., Stevie F.A., and Magee C.W. Secondary Ion Mass Spectrometry-A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (1989), John Wiley & Sons, New York App. D. 1
2. McPhail D.S., Dowsett M.G., and Parker E.H.C. J. Appl. Phys. 60 7 (1986) 2573
3. Alexandrov O.V., Kazantsev D.Yu., and Kovarsky A.P. Appl. Surf. Sci. 203-204 (2003) 520-522
4. Smith H.E., Morrison G.H., and Hodul D.T. J. Vac. Sci. Technol. A4 (1986) 2492
5. Baboux N., Dupuy J.C., Prudon G., Holliger P., Laugier F., Papon A.M., and Hartmann J.M. J. Cryst. Growth 245 (2002) 1
6. van der Heide P.A.W., Lim M.S., Perry S.S., and Rabalais J.W. Transient effects in ultra shallow depth profiling of silicon by secondary ion mass spectrometry. J. Chem. Phys. 113 22 (2000) 10344-10352
7. Barozzi M., Giubertoni D., Anderle M., and Bersani M. Appl. Surf. Sci. 231-232 (2004) 632-635
8. M. Bersani, D. Giubertoni, M. Barozzi, S. Pederzoli, E. Iacob, J.A. van den Berg, M. Werner, Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants, these proceedings.
9. Dowsett M.G., Morris R., Chou P.-F., Corcoran S.F., Kheyrandish H., Cooke G.A., Maul J.L., and Patel S.B. Appl. Surf. Sci. 203-204 (2003) 500