Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF 4 plasma treatment

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 313-315

  Li, Haiou ^a   Tang, Chak Wah ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

E D mode; GaAs; MHEMT

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CURRENT GAIN CUTOFF FREQUENCY; ENHANCEMENT-MODE DEVICES; GAAS; MAXIMUM AVAILABLE GAIN; MHEMT; ORDERS OF MAGNITUDE; PROCESS PARAMETERS; THICKNESS REDUCTION;

INDIUM COMPOUNDS;

EID: 84887413608     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Kevin J.Chen et al. IEEE Transactions on Electron Devices, VOL.43, NO.2, pp.252-257, (1996).
2. Seiyon Kim et al. IEEE Electron Device Lett. EDL-27, pp.873-876, (2006).
3. Yong Cai et al. IEEE Transactions on Electron Devices, VOL.53, NO.9, pp.2223-2230, (2006).
4. Chak-Wah et al. Compound Semiconductor Mantech, April 24-27, pp.243-245, (2006).