MOCVD grown metamorphic InAlAs/InGaAs HEMTs on GaAs substrates

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 243-245

  Tang, Chak Wah ^a   Li, Jiang ^a   Lau, Kei May ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

GaAs substrate; InALAs ingaas; LT buffer; Metamorphic; MHEMT; MOCVD

Indexed keywords

GAAS SUBSTRATES; INALAS/INGAAS; LT BUFFER; METAMORPHIC; MHEMT;

GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84887424125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. W.E. Hoke, T.D. Kennedy, A. Torabi, C.S. Whelan, P.F. Marsh, R.E.Leoni, C. Xu, K.C. Hsieh, Journal of Crystal Growth 251, pp. 827-831 (2003).
2. Elgaid, K.; McLelland, H.; Holland, M.; Moran, D.A.J.; Stanley, C.R.; Thayne, I.G, IEEE, Electron Device Lett., EDL-26, pp. 784- 786, (2005).
3. N. Pan, J. Elliott, H. Hendriks, L. Aucoin, P. Fay and I. Adesida, Appl. Phys. Lett. 66, pp.212-215 (1995).