The future of bipolar power transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2535-2543

  Huang, A Q ^a   Zhang, B ^a  

^a State University   (United States)

Author keywords

Bipolar power transistor; Switching power device; Switching power transistor; Wide bandgap semiconductor devices

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC LOSSES; ELECTRIC POTENTIAL; ENERGY GAP; POWER ELECTRONICS; SEMICONDUCTING SILICON;

BIPOLAR POWER TRANSISTOR; SWITCHING POWER DEVICE; SWITCHING POWER TRANSISTOR; WIDE BANDGAP SEMICONDUCTOR DEVICE;

BIPOLAR TRANSISTORS;

EID: 0035506979     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960379     Document Type: Article

References (10)

1. Characterization of RBSOA of high power bipolar transistors using a nondestructive tester
2. Reverse-biased second breakdown of high power Darlington transistors
3. Power semiconductor device figure of merit for high frequency applications
4. Recent advances in SiC power devices
5. Wide bandgap semiconductor power devices
6. 4H-SiC power devices: Comparative overview of UMOS, DMOS, and GTO device structures
7. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor
8. High-voltage double implanted power MOSFETs in 6H-SiC