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Volumn 310, Issue 13, 2008, Pages 3192-3196

Linear smoothing of GaAs(1 0 0) during epitaxial growth on rough substrates

Author keywords

A1. Characterization; A1. Growth models; A1. Light scattering tomography; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELASTIC SCATTERING; EPITAXIAL GROWTH; GROWTH RATE; LIGHT SCATTERING; MOLECULAR BEAM EPITAXY; TOMOGRAPHY;

EID: 44549087017     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.019     Document Type: Article
Times cited : (2)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.