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Volumn 310, Issue 13, 2008, Pages 3192-3196
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Linear smoothing of GaAs(1 0 0) during epitaxial growth on rough substrates
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Author keywords
A1. Characterization; A1. Growth models; A1. Light scattering tomography; A1. Surfaces; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
ELASTIC SCATTERING;
EPITAXIAL GROWTH;
GROWTH RATE;
LIGHT SCATTERING;
MOLECULAR BEAM EPITAXY;
TOMOGRAPHY;
ATOMISTIC DESCRIPTION;
CONTINUUM GROWTH;
LIGHT-SCATTERING TOMOGRAPHY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 44549087017
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.03.019 Document Type: Article |
Times cited : (2)
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References (27)
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