A high power density 26 V GaAs pHEMT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 817-820

  Green, B M ^a   Lan, E ^a   Li, P ^a   Hartin, O ^a   Gaw, C A ^a   CdeBaca, M ^a   Johnson, E M ^a   Klingbeil, L S ^a   Fisher, P ^a   Kim, J ^a   Maurer, D ^a   Knappenberger, B ^a   Miller, M ^a   Weitzel, C E ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FET TECHNOLOGY; MEDIAN TIME TO FAILURE (MTTF); POWER DENSITY (PD); THERMAL ACTIVATION ENERGY;

DEPOSITION; ELECTRIC RESISTANCE; ELECTROMECHANICAL DEVICES; FIELD EFFECT TRANSISTORS; HEAT RESISTANCE; INFRARED IMAGING; ROBUSTNESS (CONTROL SYSTEMS); STRENGTH OF MATERIALS; STRESS ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4444372102     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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7. K. Asano, Y. Miyoshi, K. Ishikura, Y. Nashimoto, M. Kuzuhara, and M. Mizuta, "Novel High Power AlGaAs/GaAs HFET with a Field-Modulating Plate Operated at 35V Drain Voltage", 1998 IEDM Technical Digest, pp. 331-334.
8. K. Matsunaga, K. Ishikura, I. Takenaka, W. Contrata, A. Wakejima, K. Ota, M. Kanamori, and M. Kuzuhara, "A Low-Distortion 230W GaAs Power FP-HFET Operated at 22V for Cellular Base Station", 2000 IEDM Technical Digest, pp. 393-396.
9. N. Sakura, K. Matsunaga, K. Ishikura, I. Takenaka, K. Asano, N. Iwata, M. Kanamori, and M. Kuzuhara, "100W L-Band GaAs Power FP-HFET Operated at 30V", 2000 IEEE MTT-S Digest, pp. 1715-1718.
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