Low distortion high power GaAs pseudomorphic heterojunction FETs for L/S-band digital cellular base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2000, Pages 1711-1714

  Takenaka, I ^a   Ishikura, K ^a   Takahashi, H ^a   Asano, K ^a   Kanamori, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CELLULAR BASE STATIONS; DRAIN CURRENT; PSEUDOMORPHIC HETEROJUNCTION FIELD EFFECT TRANSISTORS; PUSH PULL AMPLIFIER; SECOND HARMONIC IMPEDANCE;

CELLULAR RADIO SYSTEMS; DIGITAL COMMUNICATION SYSTEMS; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION; TRANSCONDUCTANCE;

AMPLIFIERS (ELECTRONIC);

EID: 0033693987     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)

1. R. A. Minasian, "Intermodulation Distortion Analysis of MESFET Amplifiers Using the Volterra Series Representation", IEEE Trans. Microwave Theory Tech., vol. MTT-28, pp. 1-8, 1980.
2. K. Ishikura, K. Asano, H. Takahashi, I. Takenaka, J. Morikawa and M. Kuzuhara, "150W Push-Pull Power HFET Amplifier for WS-Band Digital Communication Systems", 1998 Asia-Pacific Microwave Conference Digest, pp. 1255-1258
3. Y. Tateno, H. Takahashi, T. Igarashi and J. Fukaya, "A 150W E-mode GaAs Power FET with 35% PAE for W-CDMA Base Station", 1999 IEEE MTT-S Int. Microwave Symp. Dig., pp. 1087-1090.