Field-modulating plate (FP) InGaP MESFET with high breakdown voltage and low distortion

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 151-154

  Wakejima, A ^a   Ota, K ^a   Matsunaga, K ^a   Contrata, W ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC DISTORTION; ENERGY GAP; IONIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

FIELD MODULATING PLATE; INTERMODULATION DISTORTION; POWER DENSITY; SATURATION POWER;

MESFET DEVICES;

EID: 0034863277     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35V drain voltage
2. 100W L-band GaAs power FP-HFET operated at 30V
3. A low-distortion 230W GaAs power FP-HFET operated at 22V for cellular base station
4. Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation