A power PHEMT device technology for broadband wireless access

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 637-640

  Miller, Monte ^a   Peatman, Bill ^b   Hooper, R ^a  

^a Wireless Infrastructure Syst Div   (United States)

^b Wireless Infrastructure Syst Div   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND AMPLIFIERS; CODE DIVISION MULTIPLE ACCESS; COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC POWER SUPPLIES TO APPARATUS; MOLECULAR BEAM EPITAXY; POWER ELECTRONICS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO; WIRELESS TELECOMMUNICATION SYSTEMS;

BROADBAND WIRELESS ACCESS; DRAIN EFFICIENCIES; POWER TRANSISTOR; SIGNAL GAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035689616     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966975     Document Type: Article

References (3)

1. Power amplifiers for 3.5 GHz W-CDMA applications
2. Progress in high power SiC microwave MESFETs