100W L-band GaAs power FP-HFET operated at 30V

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2000, Pages 1715-1718

  Sakura, N ^a   Matsunaga, K ^a   Ishikura, K ^a   Takenaka, I ^a   Asano, K ^a   Iwata, N ^a   Kanamori, M ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CELLULAR BASE STATION SYSTEMS; FIELD MODULATING PLATE; HETEROJUNCTION FIELD EFFECT TRANSISTORS;

CELLULAR RADIO SYSTEMS; CURRENT VOLTAGE CHARACTERISTICS; DIGITAL COMMUNICATION SYSTEMS; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

AMPLIFIERS (ELECTRONIC);

EID: 0033678329     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. K.Asano, Y.Miyoshi, K.Ishikura, Y.Nashimoto, M.Kuzuhara and M.Mizuta, Extended Abstract of SSDM, p.392,1998
2. Y.Hori, Y.Mochizuki and M.Mizuta, Extended Abstract of SSDM, p.394,1998
3. K.Asano, Y.Miyoshi, K.Ishikura, Y.Nashimoto, M.Kumhara and M.Mizuta, IEDM'98 Dig. Tech. Papers, p.59,1998
4. F.Ono, Z.Singu, K.Asano, J.Morikawa, M.Kuzuhara and F.Emori, IEEE Journal of Solid-state Circuits, Vol.32, No.9, P. 1402, 1997