A study of the formation of yttrium silicides epitaxially grown on Si(111)

Surface and Interface Analysis

Volumn 36, Issue 8, 2004, Pages 1195-1198

  Rogero, C ^a   Polop, G ^a   Sacedon J L ^a   Gago, J A Martín ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Growth conditions; Low energy electron diffraction; Scanning tunnelling microscopy; Silicides

Indexed keywords

GERMANIDES; GROWTH CONDITIONS; MINIATURIZATIONS; SILICIDES;

ANNEALING; CHARGE COUPLED DEVICES; DIFFUSION; EPITAXIAL GROWTH; HEAT TREATMENT; LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; ULTRAHIGH VACUUM;

YTTRIUM COMPOUNDS;

EID: 4444360312     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1874     Document Type: Conference Paper

References (19)

1. Nogami J, Liu BZ, Katkov MV, Ohbuchi C. Phys. Rev. B. 2001; 63: 233-305.
2. Spence DJ, Noakes TCQ, Bailey P, Tear SP. Phys. Rev. B 2000; 62: 5016.
3. Vandré S, Kalka T, Preinesberger C, Dähne-Prietsch M. J. Vac. Sci. Technol. B 1999; 17: 1682.
4. Vandré S, Kalka T, Preinesberger C, Dähne-Prietsch M. Phys. Rev. Lett. 1999; 82: 1927.
5. Vandré S, Preinesberger C, Busse W, Dähne-Prietsch M. Appl. Surf. Sci. 2001; 78: 2012.
6. Tu KN, Thompson RD, Tsaur BY. Appl. Phys. Lett. 1981; 38: 626.
7. Norde H, de Sousa Pires J, d'Heurle FM, Pesavento F, Petersson S, Tove P. Appl. Phys. Lett. 1981; 38: 865.
8. Siegal MP, Kaatz FH, Graham WR, Santiago-Avilés JJ, Van der Spiegel J. Appl. Surf. Sci. 1998; 38: 162.
9. Siegal MP, Graham WR, Santiago-Avilés JJ. J. Appl. Phys. 1990; 68: 574.
10. Lee TL, Chen LJ. J. Appl. Phys. 1993; 73: 8256.
11. Polop C, Rogero C, Sacedón JL, Martín Gago JA. Surf. Sci. 2001; 482: 1337.
12. Arnaud d'Avitaya F, Pario A, Oberlin JC, Campidelli Y, Chroboczek JA. Appl. Phys. Lett. 1989; 54: 2198.
13. Duboz JY, Badoz PA, Perio A, Oberlin JC, Arnaud d'Avitaya F, Campidelli Y, Chroboczek JA. Appl. Surf. Sci. 1989; 38: 171.
14. Mazurek P, Paprocki K, Mikolajczak P. Thin Solid Films 1995; 267: 95.
15. Wu MF, Yao S, Vantomme A, Hogg S, Pattyn H, Langouche G, Yang A, Wang Q. J. Vac. Sci. Technol. B 1998; 16: 1901.
16. Zhou J, Chen N, Zhang F, Song S, Chai C, Yang S, Liu Z, Lin L. J. Crystal Growth 2002; 242: 389.
17. Rogero C, Polop C, Magaud L, Sacedón JL, de Andrés PL, Martín-Gago JA. Phys. Rev. B 2002; 66: 235 421.
18. Zangwill A, Physics at Surfaces, Cambridge University Press: Cambridge, 1988.
19. Martín-Gago JA, Gómez-Rodríguez JM, Veuillen JY. Surf. Sci. 1996; 366: 491.