Resistance noise scaling in a two-dimensional hole system in GaAs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5469, Issue , 2004, Pages 101-113

  Leturcq, R ^a   Deville, G ^a   L'Hote D ^a   Tourbot, R ^a   Mellor, C J ^b   Henini, M ^b  

^a SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

1 f noise; Percolation; Phase transitions; Two dimensional systems

Indexed keywords

1/F NOISE; PERCOLATION TRANSITION; STRONG LOCALIZATION (SL); TWO DIMENSIONAL SYSTEMS;

COULOMB BLOCKADE; CRYSTALLIZATION; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTROSTATICS; HOLE MOBILITY; MOSFET DEVICES; PERCOLATION (SOLID STATE); PHASE TRANSITIONS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4444339979     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546505     Document Type: Conference Paper

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