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Physical Review Letters

Volumn 85, Issue 20, 2000, Pages 4357-4360

Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening

(7) Senz, V a Ihn, T a Heinzel, T a Ensslin, K a Dehlinger, G b Grutzmacher D b Gennser, U b

a ETH ZURICH (Switzerland)

b PAUL SCHERRER INSTITUTE (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; FERMI LEVEL; FERMI LIQUIDS; LOW TEMPERATURE EFFECTS; METAL INSULATOR TRANSITION; SEMICONDUCTING SILICON COMPOUNDS;

SILICON GERMANIUM QUANTUM WELL; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4444316387 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.85.4357 Document Type: Article

Times cited : (40)

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