Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

Physical Review Letters

Volumn 89, Issue 27, 2002, Pages

  Jaroszynski J ^a   Popović, Dragana ^a   Klapwijk, T M ^b  

^a FLORIDA STATE UNIVERSITY   (United States)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; FREQUENCIES; METAL INSULATOR TRANSITION; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE;

LOW-FREQUENCY RESISTANCE NOISE;

SPIN GLASS;

EID: 0037203390     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.276401     Document Type: Article

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