Resistance noise scaling in a dilute two-dimensional hole system in GaAs

Physical Review Letters

Volumn 90, Issue 7, 2003, Pages

  Leturcq, R ^a   L'Hote D ^a   Tourbot, R ^a   Mellor, C J ^b   Henini, M ^b  

^a DIF   (France)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; FERMI LEVEL; GATES (TRANSISTOR); MOSFET DEVICES; PHASE TRANSITIONS; POLYIMIDES; QUANTUM THEORY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMAL EFFECTS;

COULOMB INTERACTION; DILUTE TWO-DIMENSIONAL HOLE SYSTEM; HOLE-HOLE INTERACTION; METAL-INSULATOR TRANSITION; OHMIC CONDUCTION; RESISTANCE NOISE SCALING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037458435     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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