Growth of c-GaN films on the nitridated β-Ga2O3 substrates using RF-MBE

Materials Research Society Symposium Proceedings

Volumn 892, Issue , 2006, Pages 717-722

  Araki, Tsutomu ^a   Morioka, Chiharu ^a   Wada, Junichi ^a   Fujiwara, Keisuke ^a   Minami, Hiroshi ^a   Nanishi, Yasushi ^a   Ohira, Shigeo ^b   Suzuki, Norihito ^b   Shishido, Toetsu ^c  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b Nippon Light Metal Company Ltd   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELECTRON MICROSCOPY; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS;

HOMO-EPITAXIAL GROWTH; NITRIDATION; NITROGEN PLASMA; RADIO FREQUENCY MOLECULAR BEAM EPITAXY (RFMBE);

SEMICONDUCTING FILMS;

EID: 33646399177     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. H. H. Tippins, Phys. Rev. 140, A316 (1965).
2. S. Geller, J. Chem. Phys. 33, 676 (1960).
3. K. Shimamura, E. G. Villora, K. Domen, K. Yui, K. Aoki and N. Ichinose, Jpn. J. Appl. Phys. 44, L7 (2005).
4. S. Ohira, J. Wada, C. Morioka, K. Fujiwara, T. Yamaguchi, T. Araki, Y. Nanishi and T. Shishido, The 6th International Conference on Nitride Semiconductors (ICNS-6), Mo-P-032 (2005).