Fabrication of 22 nm T-gates for HEMT applications

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 1375-1378

  Bentley, S ^a   Li, X ^a   Moran, D A J ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Electron beam lithography; HEMT; Reactive ion etching; T gate

Indexed keywords

ANISOTROPIC ETCHING; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; SILICON NITRIDE; TRANSISTORS;

DESIGN FLEXIBILITY; GATE RESISTANCE; PLASMA-INDUCED DAMAGE;

GATE DIELECTRICS;

EID: 44149110404     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.058     Document Type: Article

References (7)

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