High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Ling, H S ^a   Wang, S Y ^b   Lee, C P ^a   Lo, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF ASTRONOMY AND ASTROPHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STATES; EXCITED STATES; PHOTOELECTRONS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

CONFINEMENT ENHANCING LAYERS; INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 44049099820     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2926663     Document Type: Article

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