Initial stages of ZrO2 chemical vapor deposition on Si(1 0 0)-(2 × 1) from zirconium tetra-tert-butoxide

Surface Science

Volumn 602, Issue 10, 2008, Pages 1803-1809

  Karlsson, P G ^a   Gothelid E ^a,b   Richter, J H ^a   Sandell, A ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b MÄLARDALEN UNIVERSITY   (Sweden)

Author keywords

Chemical vapor deposition; High k dielectrics; Scanning tunnelling microscopy; Semiconductor insulator interfaces; Silicon; Synchrotron radiation photoelectron spectroscopy; Zirconium dioxide

Indexed keywords

CARBONIZATION; CHEMICAL VAPOR DEPOSITION; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SYNCHROTRON RADIATION;

SEMICONDUCTOR INSULATOR INTERFACES; ZIRCONIUM DIOXIDE;

ZIRCONIA;

EID: 43849086507     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2008.03.016     Document Type: Article

References (34)

1. Chang J.P., Lin Y.-S., Berger S., Kepten A., Bloom R., and Levy S. J. Vac. Sci. Technol. B 19 (2001) 2137
2. Cho B.-O., and Chang J.P. Appl. Phys. Lett. 93 (2003) 745
3. Ritala M., Leskelä M., Niinistö L., and Haussalo P. Chem. Mater. 5 (1993) 1174
4. Ritala M., Kukli K., Rahtu A., Räisänen P.I., Leskelä M., Sajavaara T., and Keinonen J. Science 288 (2000) 319
5. Choy K.L. Prog. Mater. Sci. 48 (2003) 57
6. Gladfelter W.L. Chem. Mater. 5 (1993) 1372
7. Burleson D.J., Roberts J.T., Gladfelter W.L., Campbell S.A., and Smith R.C. Chem. Mater. 14 (2002) 1269
8. Taylor C.J., Gilmer D.C., Colombo D.G., Wilk G.D., Campbell S.A., Roberts J., and Gladfelter W.L. J. Am. Chem. Soc. 121 (1999) 5220
9. Sandell A., Karlsson P.G., Richter J.H., Blomquist J., Uvdal P., and Grehk T.M. Appl. Phys. Lett. 88 (2006) 132905
10. Karlsson P.G., Richter J.H., Blomquist J., Uvdal P., Grehk T.M., and Sandell A. Surf. Sci. 601 (2007) 1008
11. Richter J.H., Karlsson P.G., Sanyal B., Blomquist J., Uvdal P., and Sandell A. J. Appl. Phys. 101 (2007) 104120
12. Adams D.P., Tedder L.L., Mayer T.M., Swartzentruber B.S., and Chason E. Phys. Rev. Lett. 74 (1995) 5088
13. Song Z., Cai T., Rodriguez J.A., Hrbek J., Chan A.S.Y., and Friend C.M. J. Phys. Chem. B 107 (2003) 1036
14. Nyholm R., Andersen J.N., Johansson U., Jensen B.N., and Lindau I. Nucl. Instrum. Meth. A 467-468 (2001) 520
15. Swartzentruber B.S., Mo Y.-W., Webb M.B., and Lagally M.G. J. Vac. Sci. Technol. A 7 (1989) 2901
16. Hamers R.J., Tromp R.M., and Demuth J.E. Phys. Rev. B 34 (1986) 5343
17. Hamers R.J., and Köhler U.K. J. Vac. Sci. Technol. A 7 (1989) 2854
18. Puthenkovilakam R., and Chang J.P. Appl. Phys. Lett. 84 (2004) 1353
19. Jeon T.S., White J.W., and Kwong D.L. Appl. Phys. Lett. 78 (2001) 368
20. Kim J.W., Carbone M., Tallarida M., Dil J.H., Horn K., Casaletto M.P., Flammini R., and Piancastelli M.N. Surf. Sci. 559 (2004) 179
21. Yeh J.J., and Lindau I. Atom. Data Nucl. Data 32 (1985) 1
22. Landemark E., Karlsson C.J., Chao Y.-C., and Uhrberg R.I.G. Phys. Rev. Lett. 69 (1992) 1588
23. Uhrberg R.I.G., Landemark E., and Chao Y.-C. J. Electr. Spectrosc. Rel. Phenom. 75 (1995) 197
24. Rochet F., Jolly F., Bournel F., Dufour G., Sirotti F., and Cantin J.-L. Phys. Rev. B 58 (1998) 11029
25. Avouris Ph., and Cahill D. Ultramicroscopy 42-44 (1992) 838
26. Udagawa M., Niwa M., and Sumita I. Jpn. J. Appl. Phys. 32 (1993) 282
27. Ikegami H., Ohmori K., Ikeda H., Iwano H., Zaima S., and Yasuda Y. Jpn. J. Appl. Phys. 35 (1996) 1593
28. Wang H.C., Lin R.F., and Wang X. Phys. Rev. B 36 (1987) 7712
29. Simon L., Kubler L., Groenen J., and Balladore J.L. Phys. Rev. B 56 (1997) 9947
30. Stoffel M., Simon L., Aubel D., Bischoff J.L., and Kubler L. Surf. Sci. 454-456 (2000) 201
31. Kim H., Kim W., Lee G., and Koo J.Y. Phys. Rev. Lett. 94 (2005) 076102
32. Kim J., Kim K., and Yong K. J. Vac. Sci. Technol. A 20 (2002) 1582
33. Kim W., Kim H., Lee G., and Koo J.-Y. Phys. Rev. Lett. 89 (2002) 106102
34. Grehk T.M., Engkvist J., Bexell U., Richter J.H., Karlsson P.G., and Sandell A. Thin Solid Films 516 (2008) 875