Atomic cracks and (2√3×2× √3)-R30° reconstruction at 6H-SiC(0001) surface

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 926-928

  Amy, F ^a,c   Soukiassian, P ^a   Brylinski, C ^b  

^a DIF   (France)

^b THALES   (France)

^c Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CRACKS; BAND GAP; CELL DISTRIBUTION; SURFACE RECONSTRUCTION;

ANNEALING; CRYSTALLIZATION; DESORPTION; LOW ENERGY ELECTRON DIFFRACTION; MICROELECTRONICS; MONOLAYERS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACE STRUCTURE;

SILICON CARBIDE;

EID: 4344713046     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1774251     Document Type: Article

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