Preparation of SiN x film by pulsed laser ablation in nitrogen gas ambient

Applied Surface Science

Volumn 197-198, Issue , 2002, Pages 376-378

  Umezu, I ^a   Yamaguchi, T ^a   Kohno, K ^a   Inada, M ^a   Sugimura, A ^a  

^a KONAN UNIVERSITY   (Japan)

Author keywords

Nitrogen; Pulsed laser ablation; Silicon; Silicon nitride

Indexed keywords

CHEMICAL BONDS; DECOMPOSITION; INFRARED RADIATION; LIGHT ABSORPTION; PULSED LASER APPLICATIONS; SILICON NITRIDE; SYNTHESIS (CHEMICAL);

INFRARED ABSORPTION PEAKS;

LASER ABLATION;

EID: 0036426713     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00343-4     Document Type: Conference Paper

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