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Materials Science and Engineering: B

Volumn 112, Issue 2-3 SPEC. ISS., 2004, Pages 144-146

Structural and electrical properties of low-temperature PECVD SiC/c-Si heterostructures

(3) Oliveira, A R a Pereyra, I a Carreno M N P a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

Heterostructures; Plasma enhanced chemical vapor deposition; Silicon carbide

Indexed keywords

ANNEALING; CURRENT DENSITY; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROELECTROMECHANICAL DEVICES; OHMIC CONTACTS; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE FRACTION; IR ABSORPTION SPECTRA; SILANE STARVING PLASMA;

HETEROJUNCTIONS;

EID: 4344680561 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.05.022 Document Type: Article

Times cited : (8)

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