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Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 355-358

Electrical characterization of SiC/Si heterostructures with modified interfaces

(3) Forster Ch a Masri, P b Pezoldt, J a

a ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

b UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

Electrical characterization; Heteroepitaxy; Heterojunctions; SiC on Si

Indexed keywords

CARBIDES; CARBONIZATION; ELECTRIC PROPERTIES; GERMANIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; EPITAXIAL GROWTH; HETEROJUNCTIONS; HYDROGEN;

ELECTRICAL CHARACTERIZATION; HYDROGEN RICH CONDITIONS; SOLID SOURCES; ELECTRICAL PERFORMANCE; MODIFIED INTERFACES; RICH CONDITIONS; SOLID SOURCE MOLECULAR BEAM EPITAXY;

HETEROJUNCTIONS; SILICON CARBIDE;

EID: 4344559313 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.355 Document Type: Article

Times cited : (8)

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