Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 187-190

  Ricciardi, C ^a   Bennici, E ^a   Cocuzza, M ^a   Mandracci, P ^a   Bich, D ^b   Guglielmetti, V ^b   Barucca, G ^c  

^a POLITECNICO DI TORINO   (Italy)

^b Olivetti I Jet   (Italy)

^c INFM   (Italy)

Author keywords

ECR CVD; MEMS; Polycrystalline SiC; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; MICROELECTROMECHANICAL DEVICES; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FILM STRUCTURE;

SEMICONDUCTING FILMS;

EID: 0037416729     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01222-1     Document Type: Conference Paper

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