An investigation of 3C-SiC photoconductive power switching devices

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 147-151

  Sheng, Senpeng ^a   Spencer, Michael G ^a   Tang, Xiao ^a   Zhou, Peizhen ^a   Wongchotigul, Kobchat ^a   Taylor, Crawford ^a   Harris, Gary L ^a  

^a Howard University   (United States)

Author keywords

Photoconductive semiconductor switches; Silicon carbide; Switching efficiency

Indexed keywords

BORON; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; EXCIMER LASERS; FLASHOVER; PHOTOCONDUCTING DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SINGLE CRYSTALS;

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (PCSS); PHOTOCURRENTS; SWITCHING EFFICIENCY;

SEMICONDUCTOR SWITCHES;

EID: 0007531563     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01966-6     Document Type: Article

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