Growth kinetics of reaction layers formed during diffusion bonding of SiC ceramic to TiAl alloy

Materials Science and Technology

Volumn 20, Issue 8, 2004, Pages 1069-1072

  Liu, H J ^a   Feng, J C ^a   Fujii, H ^b   Nogi, K ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Diffusion bonding; Growth kinetics; Interfacial reactions; Reaction layers; Silicon carbide; Titanium aluminides

Indexed keywords

INTERFACIAL REACTIONS; KINETIC PARAMETERS; PHYSICAL DIFFUSION;

DIFFUSION; GROWTH (MATERIALS); KINETIC THEORY; MATHEMATICAL MODELS; REACTION KINETICS; TITANIUM ALLOYS;

CERAMIC MATERIALS;

ALUMINUM DERIVATIVE; SILICON CARBIDE; TITANIUM DERIVATIVE;

ARTICLE; CALCULATION; CHEMICAL BINDING; CHEMICAL REACTION; DIFFUSION; GROWTH RATE; KINETICS; MATHEMATICAL MODEL; SIMULATION;

EID: 4344671732     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/026708304225017274     Document Type: Article

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